Semiconductor memory device

ABSTRACT

A semiconductor memory device according to an embodiment includes: a row decoder and a memory cell array including a first block. The first block includes: a first region, a second region adjacent to the first region in the first direction, and a third region configured to connect the first region and the second region. The memory cell array further includes: a first insulating layer buried in a first trench between the first region and the second region and in contact with the third region; a first contact plug provided in the first insulating layer and electrically connected to the row decoder; and a first interconnect configured to connect a selection gate line and the first contact plug.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional Application of U.S. patent applicationSer. No. 15/951,314, filed Apr. 12, 2018, which is a ContinuationApplication of PCT Application No. PCT/JP2016/050888, filed Jan. 13,2016, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

There is known a semiconductor memory in which memory cells arethree-dimensionally arranged.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory system according to the firstembodiment;

FIG. 2 is a circuit diagram of a block provided in the semiconductormemory device according to the first embodiment;

FIG. 3 is a circuit diagram of row decoders according to the firstembodiment;

FIG. 4 is a circuit diagram of a sense amplifier according to the firstembodiment;

FIG. 5 is a planar layout diagram of a memory cell array and a drivercircuit according to the first embodiment;

FIG. 6 is a planar layout diagram of the memory cell array according tothe first embodiment;

FIG. 7 is a planar layout diagram of a region under the memory cellarray according to the first embodiment;

FIG. 8 is a sectional view schematically showing the memory cell arrayand the region under the memory cell array according to the firstembodiment;

FIG. 9 is a planar layout diagram of a sub-array according to the firstembodiment;

FIG. 10 and FIG. 11 are planar layout diagrams of cell units accordingto the first embodiment;

FIG. 12 is a planar layout diagram of cell regions and a lane Raccording to the first embodiment;

FIG. 13 is a planar layout diagram of cell regions and a lane Raccording to the first embodiment;

FIG. 14 is a sectional view taken along a line 14-14 in FIG. 6;

FIG. 15 is a sectional view taken along a line 15-15 in FIG. 11;

FIG. 16 is a sectional view of a part of a region taken along a line16-16 in FIG. 11;

FIG. 17, FIG. 18, FIG. 19, and FIG. 20 are sectional views taken along aline 17-17, a line 18-18, a line 19-19, and a line 20-20 in FIG. 11;

FIG. 21 is a sectional view taken along a line 21-21 in FIGS. 12 and 13;

FIG. 22 is a layout diagram showing the connection relationship betweenword lines and row decoders according to the first embodiment;

FIG. 23 is a planar layout diagram of a region under a memory cell arrayaccording to the second embodiment;

FIG. 24 is a planar layout diagram showing a region R2 in FIG. 23 indetail;

FIG. 25 is a planar layout diagram of a cell region according to thethird embodiment;

FIG. 26 shows sectional views taken along a line 26A-26A and a line26B-26B in FIG. 25;

FIG. 27 is a planar layout diagram of a lane R according to the firstmodification of the first embodiment;

FIG. 28 is a planar layout diagram of a lane R according to the secondmodification of the first embodiment;

FIG. 29 is a planar layout diagram of a cell region according to thefirst modification of the third embodiment;

FIG. 30 is a planar layout diagram of a cell region according to thesecond modification of the third embodiment; and

FIG. 31 is a planar layout diagram of a cell region according to thethird modification of the third embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor memory deviceincludes: a row decoder provided on a semiconductor substrate; and amemory cell array provided above the row decoder and including a firstblock. The first block includes: a first region spreading along a firstplane formed by a first direction that is an in-plane direction of thesemiconductor substrate and a second direction that is the in-planedirection and is different from the first direction and having a firstwidth along the second direction; a second region spreading along thefirst plane, having a second width larger than the first width along thesecond direction, and being adjacent to the first region in the firstdirection; and a third region spreading along the first plane, having athird width smaller than the first width along the second direction, andlocated between the first region and the second region to connect thefirst region and the second region. The first region, the second region,and the third region include a plurality of first word lines stackedalong a third direction that is a vertical direction of thesemiconductor substrate, and the first region further includes a firstselection gate line provided above a first word line of an uppermostlayer. The memory cell array further includes: a first insulating layerburied in a first trench between the first region and the second regionand being in contact with the third region in the second direction; afirst contact plug provided in the first insulating layer andelectrically connected to the row decoder; and a first interconnectconfigured to connect the first selection gate line and the firstcontact plug.

The embodiments will now be described with reference to the accompanyingdrawings. Note that in the following description, the same referencenumerals denote constituent elements having the same functions andarrangements.

1. First Embodiment

A semiconductor memory device according to the first embodiment will bedescribed. A 3D-stacked NAND flash memory in which memory cells arethree-dimensionally stacked above a semiconductor substrate will beexemplified below as the semiconductor memory device.

1.1 Arrangement

1.1.1 Overall Arrangement of Memory System

A general overall arrangement of a memory system including thesemiconductor memory device according to this embodiment will bedescribed first with reference to FIG. 1. FIG. 1 is a block diagram ofthe memory system according to this embodiment.

As shown in FIG. 1, a memory system 1 includes a NAND flash memory 100and a controller 200. The NAND flash memory 100 and the controller 200may form one semiconductor device by, for example, a combination.Examples of such a device are a memory card such as an SD™ card and anSSD (Solid State Drive).

The NAND flash memory 100 includes a plurality of memory cells andstores data in a nonvolatile manner. The controller 200 is connected tothe NAND flash memory 100 by a NAND bus and connected to a hostapparatus 300 by a host bus. The controller 200 controls the NAND flashmemory 100, and accesses the NAND flash memory 100 in response to aninstruction received from the host apparatus 300. The host apparatus 300is, for example, a digital camera, a personal computer, or the like, andthe host bus is, for example, a bus complying with an SD™ interface. TheNAND bus transmits/receives signals complying with a NAND interface.Specific examples of the signals are a command latch enable signal CLE,an address latch enable signal ALE, a write enable signal WEn, a readenable signal REn, a ready busy signal RBn, and an input/output signalI/O.

The signals CLE and ALE are signals that notify the NAND flash memory100 that the input signals I/O to the NAND flash memory 100 are acommand and an address, respectively. The signal WEn is a signalasserted at a low level and used to make the NAND flash memory 100receive the input signal I/O. Note that “assert” means that a signal (ora logic) is set in a valid (active) state, and “negate” as a termopposed to this means that a signal (or a logic) is set in an invalid(inactive) state. The signal REn is also a signal asserted at a lowlevel and used to read the output signal I/O from the NAND flash memory100. The ready busy signal RBn is a signal representing whether the NANDflash memory 100 is in a ready state (a state in which an instructionfrom the controller 200 can be received) or a busy state (a state inwhich an instruction from the controller 200 cannot be received), andthe low level represents the busy state. The input/output signal I/O is,for example, an 8-bit signal. The input/output signal I/O is the entityof data transmitted/received between the NAND flash memory 100 and thecontroller 200 and includes a command, an address, write data, readdata, and the like.

1.1.2 Arrangement of Controller 200

Details of the arrangement of the controller 200 will be described nextwith reference to FIG. 1. As shown in FIG. 1, the controller 200includes a host interface circuit 210, an embedded memory (RAM) 220, aprocessor (CPU) 230, a buffer memory 240, a NAND interface circuit 250,and an ECC circuit 260.

The host interface circuit 210 is connected to the host apparatus 300via the host bus and transfers instructions and data received from thehost apparatus 300 to the processor 230 and the buffer memory 240,respectively. The host interface circuit 210 also transfers data in thebuffer memory 240 to the host apparatus 300 in response to aninstruction from the processor 230.

The processor 230 controls the operation of the entire controller 200.For example, upon receiving a write instruction from the host apparatus300, the processor 230 issues a write instruction to the NAND interfacecircuit 250, in response to the instruction. This also applies to readand erase. The processor 230 also executes various processes formanaging the NAND flash memory 100 such as wear leveling.

The NAND interface circuit 250 is connected to the NAND flash memory 100via the NAND bus and controls communication with the NAND flash memory100. Based on an instruction received from the processor 230, the NANDinterface circuit 250 outputs the signals ALE, CLE, WEn, and REn to theNAND flash memory 100. Furthermore, in writing, the NAND interfacecircuit 250 transfers a write command issued by the processor 230 andwrite data in the buffer memory 240 to the NAND flash memory 100 as theinput/output signal I/O. Moreover, in reading, the NAND interfacecircuit 250 transfers a read command issued by the processor 230 to theNAND flash memory 100 and further receives data read from the NAND flashmemory 100 as the input/output signal I/O, and transfers it to thebuffer memory 240.

The buffer memory 240 temporarily holds write data or read data.

The embedded memory 220 is, for example, a semiconductor memory such asa DRAM, and is used as a work area of the processor 230. The embeddedmemory 220 holds firmware, various kinds of management tables, and thelike that are used to manage the NAND flash memory 100.

The ECC circuit 260 executes error correction (ECC: Error Checking andCorrecting) processing of data. That is, in data writing, the ECCcircuit 260 generates a parity based on write data. In data reading, theECC circuit 260 generates a syndrome from a parity, detects an error,and corrects the error. Note that the CPU 230 may have the function ofthe ECC circuit 260.

1.1.3.1 Arrangement of NAND Flash Memory 100

The arrangement of the NAND flash memory 100 will be described next. Asshown in FIG. 1, the NAND flash memory 100 includes a memory cell array110, row decoders 120 (120-0 to 120-3), a driver circuit 130, a senseamplifier 140, an address register 150, a command register 160, and asequencer 170.

The memory cell array 110 includes, for example, four blocks BLK (BLK0to BLK3) each including a plurality of nonvolatile memory cells. Thememory cell array 110 stores data send from the controller 200.

The row decoders 120-0 to 120-3 are provided in correspondence with theblocks BLK0 to BLK3, respectively, and select the corresponding blocks.Note that the plurality of blocks BLK may be selected by one rowdecoder. Such an arrangement is described in, for example, U.S. patentapplication Ser. No. 13/784,512 filed on Mar. 4, 2013 and entitled“NONVOLATILE SEMICONDUCTOR MEMORY DEVICE”. This patent application isentirely incorporated herein by reference.

The driver circuit 130 outputs a voltage to a selected one of the blocksBLK0 to BLK3 via a corresponding one of the row decoders 120-0 to 120-3.

In data reading, the sense amplifier 140 senses data read from thememory cell array 110 and outputs data DAT to the controller. In datawriting, the sense amplifier 140 transfers the write data DAT receivedfrom the controller 200 to the memory cell array 110.

The address register 150 holds an address ADD received from thecontroller 200. The command register 160 holds a command CMD receivedfrom the controller 200.

The sequencer 170 controls the operation of the entire NAND flash memory100 based on the command CMD held by the command register 160. Inaddition, when setting a ROM fuse, the address of ROM fuse data is heldby the address register 150, a ROM fuse register in the sequencer 170 isaccessed based on the information, and the value of the register isupdated. This also applies to a set feature command in the NANDinterface. The set feature command is a command issued by the controller200 and used to set various parameters of the NAND flash memory 100.When the set feature command is set in the command register, parameterdata transmitted from the controller 200 next to the set feature commandare set in various kinds of registers in the sequencer 170.

1.1.3.2 Circuit Arrangement of Memory Cell Array 110

The circuit arrangement of the memory cell array 110 will be describednext. FIG. 2 is a circuit diagram of one of the blocks BLK, and theremaining blocks BLK also have the same arrangement.

As shown in FIG. 2, the block BLK includes, for example, four stringunits SU (SU0 to SU3). Each string unit SU includes a plurality of NANDstrings 111.

Each of the NAND strings 111 includes, for example, 19 memory celltransistors MT (MT0 to MT18), and selection transistors ST (ST1 andST2).

The memory cell transistor MT includes a stacked gate including acontrol gate and a charge accumulation layer, and holds data in anonvolatile manner. The number of memory cell transistors MT is notlimited to 19, and the number is not limited. In addition, the chargeaccumulation layer may be formed by a conductive layer (FG structure) ormay be formed by an insulating layer (MONOS structure). The currentpaths of the plurality of memory cell transistors MT are connected inseries between the selection transistors ST1 and ST2. The current pathof the memory cell transistor MT18 on one end side of the seriesconnection is connected to one end of the current path of the selectiontransistor ST1, and the current path of the memory cell transistor MT0on the other end side is connected to one end of the current path of theselection transistor ST2.

The gates of the selection transistors ST1 in the string units SU0 toSU3 are commonly connected to selection gate lines SGD0 to SGD3,respectively. On the other hand, the gates of the selection transistorsST2 are commonly connected to the same selection gate line SGS betweenthe plurality of string units. In addition, the control gates of thememory cell transistors MT0 to MT18 in the same block are commonlyconnected to word lines WL0 to WL18, respectively.

That is, the word lines WL0 to WL18 and the selection gate line SGS arecommonly connected between the plurality of string units SU0 to SU3 inthe same block BLK, whereas the selection gate line SGD is independentlyprovided for each of the string units SU0 to SU3 even in the same blockBLK.

In addition, of the NAND strings 111 arranged in a matrix in the memorycell array 110, the other end sides of the current paths of theselection transistors ST1 of the NAND strings 111 on the same column arecommonly connected to bit lines BL (BL0 to BL(L−1), (L−1) is a naturalnumber not less than 1). That is, the bit lines BL commonly connect theNAND strings 111 between the plurality of string units SU, and alsocommonly connect the NAND strings 111 between the plurality of blocksBLK. Furthermore, the other end sides of the current paths of theselection transistors ST2 are commonly connected to a source line SL.The source line SL commonly connects the NAND strings 111 between, forexample, the plurality of blocks.

Data of the memory cell transistors MT in the same block may be erasedat once. On the other hand, reading and writing of data is performed atonce for the plurality of memory cell transistors MT commonly connectedto one word line WL in one of the string units SU in one of the blocks.

In addition, data erase may be performed for each block BLK or a unitsmaller than the block BLK. An erase method is described in, forexample, U.S. patent application Ser. No. 13/235,389 filed on Sep. 18,2011 and entitled “NONVOLATILE SEMICONDUCTOR MEMORY DEVICE”. Further, anerase method is described in U.S. patent application Ser. No. 12/694,690filed on Jan. 27, 2010 and entitled “NON-VOLATILE SEMICONDUCTOR STORAGEDEVICE”. Still an erase method is described in U.S. patent applicationSer. No. 13/483,610 filed on May 30, 2012 and entitled “NONVOLATILESEMICONDUCTOR MEMORY DEVICE AND DATA ERASE METHOD THEREOF”. These patentapplications are entirely incorporated herein by reference.

1.1.3.3 Circuit Arrangement of Row Decoders 120

The circuit arrangement of the row decoders 120 will be described nextwith reference to FIG. 3. As shown in FIG. 3, each row decoder 120includes a block decoder 40, and high-withstand-voltage n-channel MOStransistors 50 (50-0 to 50-23).

The block decoder 40 will be described first. In data writing, reading,and erasing, the block decoder 40 decodes a block address BA receivedfrom the address register 150. If the block address BA matches thecorresponding block BLK, a signal TG is asserted. The potential of theasserted signal TG is set to a voltage that sets the transistors 50 inan ON state. On the other hand, if the block address BA does not matchthe block BLK, the signal TG is negated, and the potential of the signalTG is set to a voltage (for example, 0 V) that sets the transistors 50in an OFF state.

The transistors 50 will be described next. The transistors 50-0 to 50-18are configured to transfer voltages to the word lines WL0 to WL18 of theselected block BLK. One end sides of the current paths of thetransistors 50-0 to 50-18 are connected to the word lines WL0 to WL18 ofthe corresponding block BLK, respectively, the other end sides areconnected to signal lines CG0 to CG18, respectively, and the gates arecommonly connected to the signal line TG.

The transistors 50-19 to 50-22 are configured to transfer voltages tothe selection gate lines SGD0 to SGD3 of the selected block BLK. One endsides of the current paths of the transistors 50-19 to 50-22 areconnected to the selection gate lines SGD0 to SGD3 of the correspondingblock BLK, respectively, the other end sides are connected to signallines SGDD0 to SGDD3, respectively, and the gates are commonly connectedto the signal line TG.

The transistor 50-23 is configured to transfer a voltage to theselection gate line SGS of the selected block BLK. One end of thecurrent path of the transistor 50-23 is connected to the selection gateline SGS of the corresponding block BLK, the other end is connected to asignal line SGSD, and the gate is commonly connected to the signal lineTG.

Hence, for example, in the row decoder 120 corresponding to the selectedblock BLK, the transistors 50-0 to 50-23 are turned on. Accordingly, theword lines WL0 to WL18 are connected to the signal lines CG0 to CG18,the selection gate lines SGD0 to SGD3 are connected to the signal linesSGDD0 to SGDD3, and the selection gate line SGS is connected to thesignal line SGSD.

On the other hand, in the row decoder 120 corresponding to thenon-selected block BLK, the transistors 50-0 to 50-23 are set in the OFFstate. Accordingly, the word lines WL and the selection gate lines SGDand SGS are disconnected from the signal lines CG, SGDD, and SGSD.

The signal lines CG, SGDD, and SGSD are commonly used by the rowdecoders 120-1 to 120-3. Then, the driver circuit 130 applies voltagesto the signal lines CG, SGDD, and SGSD in accordance with a page addressPA received from the address register 150. That is, voltages output fromthe driver circuit 130 are transferred to the interconnects WL, SGD, andSGS in the selected block via the transistors 50 in one of the rowdecoders 120 corresponding to the selected block.

1.1.3.4 Circuit Arrangement of Sense Amplifier 140

The circuit arrangement of the sense amplifier 140 will be describednext. As the sense amplifier 140 according to this example, anarrangement for determining data by sensing a current flowing to a bitline will be exemplified. However, an arrangement for sensing a voltageis also possible.

The sense amplifier 140 includes a sense circuit 10 provided for eachbit line BL. FIG. 4 is a circuit diagram of the sense circuit 10.

As shown FIG. 4, the sense circuit 10 generally includes a senseamplifier unit 11, a latch circuit 12, and a connecting portion 13. Notethat when each memory cell transistor holds data of two or more bits,two or more latch circuits are provided.

The connecting portion 13 connects the corresponding bit line BL and thesense amplifier unit 11 and controls the potential of the bit line BL.The connecting portion 13 includes n-channel MOS transistors 14 and 15.In the transistor 14, a signal BLS is applied to the gate, and thesource is connected to the corresponding bit line BL. In the transistor15, the source is connected to the drain of the transistor 14, a signalBLC is applied to the gate, and the drain is connected to a node SCOM.The transistor 15 is configured to clamp the corresponding bit line BLto a potential according to the signal BLC.

The sense amplifier unit 11 senses data read to the bit line BL. Thesense amplifier unit 11 includes n-channel MOS transistors 20 to 26, ap-channel MOS transistor 27, and a capacitive element 28.

The transistor 27 is configured to charge the bit line BL and thecapacitive element 28, and a node INV_S is connected to the gate, thedrain is connected to a node SSRC, and a power supply voltage VDD isapplied to the source. The transistor 20 is configured to precharge thebit line BL, and a signal BLX is applied to the gate, the drain isconnected to the node SSRC, and the source is connected to the nodeSCOM. The transistor 22 is configured to charge the capacitive element28, and a signal HLL is applied to the gate, the drain is connected tothe node SSRC, and the source is connected to a node SEN. The transistor21 is configured to discharge the node SEN in data sensing, and a signalXXL is applied to the gate, the drain is connected to the node SEN, andthe source is connected to the node SCOM. The transistor 26 isconfigured to fix the bit line BL to a predetermined potential, and thegate is connected to the node INV_S, the drain is connected to the nodeSCOM, and the source is connected to a node SRCGND.

The capacitive element 28 is charged in precharging the bit line BL. Oneelectrode is connected to the node SEN, and a signal CLK is applied tothe other electrode.

In the transistor 23, a signal BLQ is applied to the gate, the source isconnected to the node SEN, and the drain is connected to a node LBUS.The node LBUS is a signal path used to connect the sense amplifier unit11 and the latch circuit 12. The transistor 24 is configured to decide adata sense timing and also store read data in the latch circuit 12, anda signal STB is applied to the gate, and the drain is connected to thenode LBUS.

The transistor 25 is configured to sense whether read data is “0” or“1”, and the gate is connected to the node SEN, the drain is connectedto the source of the transistor 24, and the source is grounded.

The node INV_S is a node in the latch circuit 12 and may have a levelaccording to data held by the latch circuit 12. For example, in datareading, if a selected memory cell turns on and the potential of thenode SEN sufficiently lowers, the node INV_S is set at “H” level. On theother hand, if the selected memory cell is in the OFF state and the nodeSEN holds a predetermined potential, the node INV_S is set at “L” level.

In the above-described arrangement, at the timing when the signal STB isasserted, the transistor 25 senses read data based on the potential ofthe node SEN, and the transistor 24 transfers the read data to the latchcircuit 12. The various kinds of control signals including the signalSTB are issued from, for example, the sequencer 170.

Note that various arrangements are applicable as the sense circuit 10.For example, an arrangement described in U.S. patent application Ser.No. 13/052,148 filed on Mar. 21, 2011 and entitled “THRESHOLD DETECTINGMETHOD AND VERIFY METHOD OF MEMORY CELL” is applicable. This patentapplication is entirely incorporated herein by reference.

1.2 Planar Layout and Sectional Structure of NAND Flash Memory 100

A detailed example of the planar layout and the sectional structure ofthe NAND flash memory 100 having the above-described arrangement will bedescribed next while placing focus on the memory cell array 110, the rowdecoder 120, and the sense amplifier 140.

1.2.1 Overall Arrangement

A rough planar layout and sectional structure will be described firstwith reference to FIG. 5. FIG. 5 shows the planar layout of the memorycell array 110 and the driver circuit 130. As shown in FIG. 5, thememory cell array 110 includes, for example, four logical planes LP (LP0to LP3) arranged in the X-axis direction. The logical plane LP is alogical access unit to the memory cell array 110. It is also possible tosimultaneously access a plurality of logical planes LP.

Note that the Z-axis direction orthogonal to the X-axis direction is adirection vertical to the surface of the semiconductor substrate onwhich the NAND flash memory 100 is formed. In addition, the X-axisdirection is orthogonal to the Z-axis direction, and is one of thein-plane directions of the semiconductor substrate. The Y-axis directionis orthogonal to the Z- and X-axis directions, and is one of thein-plane direction of the semiconductor substrate different from theX-axis direction.

Each logical plane LP includes, for example, four sub-arrays SBARYarranged along the Y-axis direction. Hence, in the example shown in FIG.5, the memory cell array 110 includes (4×4) sub-arrays SBARY on the X-Yplane.

Each of the sub-arrays SBARY includes, for example, four cell regions,two lanes C, and two lanes R. The four cell regions are arranged in a(2×2) matrix on the X-Y plane. The lane C is provided between two cellregions adjacent along the X-axis direction. The lane R is providedbetween two cell regions adjacent along the Y-axis direction. The cellregion is a region where the memory cell transistors MT are actuallyformed. In the cell region, the memory cell transistors MT are stackedalong the Z-axis direction, thereby forming the NAND strings 111, andthe sets of the NAND strings 111 form the plurality of blocks BLK. Onthe other hand, the lanes C are connecting portions associated withinterconnects related to the column such as bit lines BL and the lanes Rare connecting portions associated with interconnects related to the rowsuch as word lines and signal lines CG.

Note that the lanes C and the lanes R are provided not only in eachsub-array but also between adjacent sub-arrays. FIG. 6 shows this state.FIG. 6 shows a region R1 in FIG. 5 in detail. As shown in FIG. 6, thelanes R are also provided between cell regions that belong to thesub-arrays SBARY different from each other and are adjacent in theY-axis direction. In addition, the lanes C are also provided betweencell regions that belong to the sub-arrays SBARY (in other words, thelogical planes LP) different from each other and are adjacent in theX-axis direction.

FIG. 7 shows the planar layout (the layout viewed on the X-Y plane) ofthe row decoder 120 and the sense amplifier 140. The row decoder 120 andthe sense amplifier 140 are located immediately under the memory cellarray 110. FIG. 7 shows an example of the arrangement of the row decoder120 and the sense amplifier 140 in a region overlapping two logicalplanes LP (that is, (4×2) sub-arrays SBARY) in the Z-axis direction.Note that each of the row decoder 120 and the sense amplifier 140 isdivided into a plurality of regions and formed on the semiconductorsubstrate. The divided regions will be referred to as row decoders RDand sense amplifiers SA hereinafter. In addition, the sense circuit 10includes a plurality of latch circuits, and includes an arithmeticcircuit that performs an operation using data held by the latchcircuits, although a description thereof has been omitted in FIG. 4. Thearithmetic circuit is shown as an arithmetic circuit YLOG in FIG. 7.

As shown in FIG. 7, two sense amplifier circuits SA, four row decodersRD, and two arithmetic circuits YLOG are arranged immediately under onesub-array SBARY. Placing focus on a certain sub-array SBARY, in theexample shown in FIG. 7, the sense amplifier SA is arranged immediatelyunder a cell region 60-1 located at the upper left position of the sheetsurface of FIG. 7. In addition, the row decoder RD, the arithmeticcircuit YLOG, and the row decoder RD are sequentially arranged along theY-axis direction immediately under a cell region 60-2 adjacent to thecell region 60-1 across the lane R in the Y-axis direction. Furthermore,the row decoder RD, the arithmetic circuit YLOG, and the row decoder RDare sequentially arranged along the Y-axis direction immediately under acell region 60-3 adjacent to the cell region 60-1 across the lane C inthe X-axis direction. Then, the sense amplifier SA is arrangedimmediately under a cell region 60-4 adjacent to the cell region 60-3 inthe Y-axis direction.

That is, the sense amplifiers SA, the row decoders RD, and thearithmetic circuits YLOG are periodically arranged in the regionimmediately under the memory cell array 110. That is, each senseamplifier SA is adjacent to the set of two row decoders RD and thearithmetic circuit YLOG in both the Y-axis direction and the X-axisdirection. Each set of the row decoders RD and the arithmetic circuitYLOG is also adjacent to the sense amplifier SA in both the Y-axisdirection and the X-axis direction. That is, in the region immediatelyunder the memory cell array 110, the sense amplifiers SA and the sets ofthe row decoders RD and the arithmetic circuits YLOG are alternatelyarranged in both the X-axis direction and the Y-axis direction. Onesense amplifier SA overlaps one cell region 60, and one set of the rowdecoders RD and the arithmetic circuit YLOG overlaps one cell region 60.

FIG. 8 is a sectional view of the memory cell array and the regionimmediately under the memory cell array, and shows the typicalarrangement of the sub-array SBARY.

As shown in FIG. 8, the sense amplifier 140 and the row decoder 120 areformed on a semiconductor substrate 500. An interlayer dielectric film501 is formed on the semiconductor substrate 500 so as to cover theseelements, and the memory cell array 110 is formed on the interlayerdielectric film 501. An interlayer dielectric film 502 is formed on theinterlayer dielectric film 501 so as to cover the memory cell array 110.

That is, semiconductor elements (MOS transistors and the like) includedin the sense amplifier 140 and the row decoder 120 are formed on thesemiconductor substrate 500. For example, two metal interconnect layers(interconnects M0 and M1 under the cells) are formed in the interlayerdielectric film 501 that covers the semiconductor elements. Theinterconnect M1 is formed above the interconnects M0. The interconnectsM0 and M1 electrically connect the semiconductor elements in the senseamplifier 140 and the row decoder 120, and also electrically connect thesense amplifier 140 and the row decoder 120 to the memory cell array110. The interconnect M0 and the semiconductor substrate 500 or the gateCG are connected by a contact plug CS. In addition, the interconnects M0and M1 are connected by a contact plug V1.

The memory cell array 110 is formed on the interlayer dielectric film501. In the cell region, a conductive layer (for example, a polysiliconlayer or a metal layer) functioning as the source line SL is formed onthe interlayer dielectric film 501, and a silicon pillar MH that becomesthe current path of the NAND string 111 (a region where the channels ofthe memory cell transistor MT and selection transistors ST1 and ST2 areformed) is formed on the source line SL. A plurality of conductivelayers (for example, polysilicon layers) functioning as the selectiongate line SGS, the word lines WL, and the selection gate line SGD arefurther formed on an insulating film on the source line SL. In addition,a charge accumulation layer is formed between the silicon pillar MH andeach of the selection gate line SGS and the word lines WL so as tosurround the silicon pillar MH. The charge accumulation layer is afloating gate electrode FG formed by, for example, a conductive layer(polysilicon layer or the like). However, the charge accumulation layermay be formed by an insulating film. A gate insulating film is providedbetween the silicon pillar MH and the floating gate electrodes FG. Inaddition, a block insulating film is provided between the floating gateelectrode FG and a selection gate SGS and the word lines WL.

Additionally, a trench DY extending from the word line of the uppermostlayer to the source line SL is provided in the cell region. The trenchDY is filled with the interlayer dielectric film 502. In the regionshown in FIG. 8, each of the conductive layers functioning as the wordlines WL, the selection gate line SGS, and the source line SL is dividedby the trench DY into two regions. However, the regions are connected ina region not shown (a connecting portion CNCT to be described later).Additionally, a contact plug C0 connected to the interconnect M1 isprovided in the trench DY.

An end of each of the selection gate line SGS and the word lines WLfacing the lane R has a step shape. That is, the ends of the selectiongate line SGS and the word lines WL are processed so as not to overlapthe interconnects (word lines WL) on the above layer. In this region,contact plugs CC are formed on the selection gate lines SGS and SGD andthe word lines WL.

In the lane R or C, the contact plug C0 connected to the interconnect M1is formed in the interlayer dielectric film 502.

Contact plugs C1 are formed on the silicon pillar MH and the contactplugs CC. In addition, the interlayer dielectric film 502 is formed tocover the above-described components.

An interlayer dielectric film 503 is formed on the interlayer dielectricfilm 502. Two metal interconnect layers (interconnects D1 and D2 on thecells) are formed in the interlayer dielectric film 503. Theinterconnect D2 is formed above the interconnects D1. For example, theinterconnects D1 electrically connect the memory cell array 110 to therow decoder 120 and the sense amplifier 140, and a signal that controlsthe row decoder 120 or the sense amplifier 140 is transmitted by theinterconnect D2.

In the cell region, the interconnects D1 connected to the contact plugsC1 are formed on the interlayer dielectric film 502, and these functionas the selection gate lines SGD and SGS, the word lines WL, the bit lineBL, and the source line SL. In addition, the interconnect D2 isconnected to the interconnect D1 by a contact plug C2 (not shown).

1.2.2 Details of Sub-Array SBARY

Details of the arrangement of the sub-array SBARY will be describednext.

1.2.2.1 Planar Structure of Sub-Array SBARY

First, details of the planar structure of the sub-array SBARY will bedescribed.

<Planar Structure of Cell Region>

FIG. 9 shows one of the sub-arrays SBARY shown in FIG. 5, and shows thestructure of each cell region in more detail. As shown in FIG. 9, eachcell region included in the sub-array SBARY includes a plurality of cellunits CU. Each cell unit CU includes two blocks BLK (block 1 and block2). Each block BLK includes a cell portion CEL, a word line hook-upportion WLHU, and the connecting portion CNCT.

The cell portion CEL is a stacked structure including the source lineSL, the selection gate lines SGS and SGD, and the word lines WLdescribed with reference to FIG. 8. The cell portion CEL includes thememory hole therein and is for NAND string formed therein.

The hook-up portion WLHU is a region used to form contact plugs on theword lines WL and the selection gate line SGS. Each word line WL iselectrically connected to the transistor 50 of the row decoder RD viathe contact plug. Note that the selection gate line SGD is not providedin the hook-up portion WLHU. This is because, as shown in FIG. 8, theselection gate line SGD is connected to the transistor 50 of the rowdecoder RD via the trench DY in the cell region, as will be describedlater in detail.

The connecting portion CNCT is a region used to physically connect theword lines WL and the selection gate line in the cell portion CEL andthe word lines WL and the selection gate line SGS in the hook-up portionWLHU.

Additionally, in each block BLK, the cell portion CEL, the connectingportion CNCT, and the hook-up portion WLHU are arranged along the Ydirection. At this time, the cell portion CEL, the connecting portionCNCT, and the hook-up portion WLHU are arranged along the Y direction inthis order in one block BLK, whereas the hook-up portion WLHU, theconnecting portion CNCT, and the cell portion CEL are arranged in thisorder in the other block BLK.

In each cell unit CU, the two cell portions CEL are adjacent to eachother in the X direction. The two cell portions CEL are physicallyseparated by a slit SLT2 provided along the Y direction. The slit SLT2has a structure in which an insulating layer is buried in a trenchextending through the selection gate lines SGS and SGD and the wordlines WL in the cell portion CEL.

In addition, the two hook-up portions WLHU in each cell unit CU arearranged to face each other in the Y direction across the two cellportions CEL arranged in the X direction. The width of each hook-upportion WLHU almost equals, for example, the width of the two cellportions CEL along the X direction and the width of the slit SLT2 alongthe X direction. The hook-up portion WLHU and the cell portion CEL whichare adjacent in the Y direction are physically separated by the trenchDY provided along the X direction. The trench DY has a structure inwhich an insulating layer is buried in a trench extending through thesource line SL, the selection gate lines SGS and SGD, and the word linesWL.

The connecting portion CNCT is provided between the cell portion CEL andthe hook-up region WLHU which belong to the same block. By theconnecting portion CNCT, as described above, the selection gate line SGSand the word lines WL in the cell portion CEL are physically connectedto the selection gate line SGS and the word lines WL in the hook-upregion WLHU which belong to the same block BLK. Note that the width ofthe connecting portion CNCT along the X direction is made smaller thanthe width of the cell portion CEL along the X direction. Hence, thetrench DY exists between the cell portion CEL and the hook-up portionWLHU in the same block BLK as well. In other words, in a given cell unitCU, of the two ends of the cell portion CEL along the Y direction, theend facing the hook-up portion WLHU belonging to the block BLK differentfrom that of the cell portion CEL wholly faces the trench DY. On theother hand, the end facing the hook-up portion WLHU belonging to thesame block BLK as that of the cell portion CEL (in other words, thehook-up portion physically connected to the cell portion CEL by theconnecting portion CNCT) only partially faces the trench DY (theremaining region is connected to the connecting portion CNCT). In otherwords, the structure of the block BLK viewed on the X-Y plane has ashape constricted in the connecting portion CNCT.

In each cell region, the plurality of cell units CU each having theabove-described structure are physically separated by slits SLT1provided along the Y direction. The slit SLT1 has a structure in whichan insulating layer is buried in a trench extending through theselection gate lines SGS and SGD and the word lines WL, and is providedfrom the end of the hook-up portion WLHU of one block BLK in the cellunit CU to the end of the hook-up portion WLHU of the other block BLKthrough the cell portion CEL. Note that the trench DY is formed toextend from the selection gate line SGD through the source line SL.However, the slits SLT1 and SLT2 need only separate the selection gateline SGD and the word lines WL, and the source line SL may be notseparated.

The cell units CU adjacent to each other across the slit SLT1 havelinearly symmetric shapes on the X-Y plane with respect to the slitSLT1. That is, when focus is placed on two given cell units CU, theblock BLK1 of one cell unit CU is arranged such that the trench DY ofthe block faces the trench DY of the block BLK1 of another cell unit CUadjacent in the X direction. In this region, the two trenches DY facingeach other are formed by an etching step performed such that the slitsSLT1 cross and burying an insulating layer in the trenches formed by theetching step. The cell portions CEL of the blocks BLK1 are provided soas to face across the cell portions CEL of other blocks BLK2.

On the other hand, the blocks BLK2 are arranged such that the connectingportions CNCT and the cell portions CEL face across the slit SLT1 andthe cell portions CEL face across the slit SLT1. Conversely, theconnecting portions CNCT exist between the trenches DY of the two blocksBLK2. Hence, the trenches DY of the two blocks BLK2 are formed asphysically different trenches in the etching step, unlike theabove-described blocks BLK1.

The slit SLT1 is also provided between the cell regions adjacent in theX direction. This region is the lane C. The slit SLT1 provided in thelane C has a structure extending through the source line SL as well. Thelane C is provided along the Y direction between the cell regions.

In addition, a region in which the source line SL, the selection gatelines SGS and SGD, and the word lines WL are removed is provided betweenthe cell regions adjacent in the Y direction as well, and an insulatinglayer is buried in the removed region. This region is the lane R. Thelane R is provided along the X direction between the cell regions.

The planar structure of the cell region will be described in more detailwith reference to FIGS. 10 and 11. FIG. 10 shows the planar layout oftwo cell units CU, and FIG. 11 shows interconnect layers formed byinterconnects above cells in FIG. 10. Note that in FIG. 10, contactplugs CP12 formed in the trenches DY are not illustrated.

The cell portion CEL will be described first. As shown in FIGS. 10 and11, in the cell portion CEL, the selection gate line SGS and the wordlines WL each having a flat plate shape spreading on the X-Y plane arestacked, and the word line WL18 is provided in the uppermost layer ofthe stacked structure of the word lines WL. The selection gate lines SGD(SGD0 to SGD3) each having a stripe shape whose longitudinal directionis parallel to the Y direction are provided on the word line WL18. Eachside surface of the selection gate lines SGD has an uneven shape on theX-Y plane and, more specifically, a wavy shape.

The silicon pillars MH described with reference to FIG. 8 are formed oneach selection gate line SGD. The silicon pillars MH are formed toextend from the selection gate line SGD to the source line SL.Additionally, as shown in FIG. 10, the silicon pillars MH are providedin a staggered pattern on the selection gate line SGD.

Metal interconnect layers IC0 each having a stripe shape along the Xdirection are formed on the silicon pillars MH. The metal interconnectlayers IC0 correspond to the interconnects D1 above cells described withreference to FIG. 8, and function as the bit lines BL.

In addition, of the two ends of each selection gate line SGD along the Ydirection, the end close to the connecting portion CNCT is provided witha contact plug CP10. The contact plug CP10 is used to connect theselection gate line SGD to the transistor 50 of the row decoder RD and,more specifically, used to connect the conductive layer functioning asthe selection gate line SGD to the interconnect D1 above the cell.Furthermore, a contact plug CP12 is provided in the trench DY. Inaddition, a metal interconnect layer IC1 that connects the contact plugsCP10 and CP12 is formed using the interconnect D1 above the cell. Thecontact plug CP12 is formed in the insulating layer in the trench DY andconnected to the interconnect M1 under the cell. The selection gate lineSGD is electrically connected to the transistor 50 of the row decoder RDvia the contact plugs CP10 and CP12 and the interconnect layer IC1.

Note that the contact plugs CP10 provided in the cell portion CELbelonging to a given block BLK are connected to the contact plugs CP12provided in the trench DY between the cell portion CEL and the hook-upportion WLHU belonging to the same block BLK. That is, the cell portionCEL is in contact with the trenches DY at the two ends along the Ydirection. The contact plugs CP10 are connected to the contact plugsCP12 provided in one of the two trenches DY, which is closer to thecontact plugs CP10.

Additionally, in the example shown in FIGS. 10 and 11, the contact plugsCP12 are not provided in the trench DY between a given cell portion CELand the hook-up portion WLHU belonging to the block BLK different fromthe block BLK to which the cell portion CEL belongs. However, some ofthe contact plugs CP12 may be provided in the trench DY.

The hook-up portion WLHU will be described next. As shown in FIGS. 10and 11, the selection gate line SGS and the word lines WL each having aflat plate shape spreading on the X-Y plane are stacked in the hook-upportion WLHU as well. The hook-up portion WLHU includes, for example,(5×4) rectangular regions, and in each region, the surfaces of theselection gate line SGS and the word lines WL0 to WL18 are exposed. Inthe example shown in FIGS. 10 and 11, the interconnect layers areexposed at intervals of one layer in each column.

More specifically, in a given column (this will be referred to as afirst column), the upper surfaces of the selection gate line SGS and theword lines WL1, WL3, WL5, and WL7 are exposed. Ina column (this will bereferred to as a second column) adjacent to the first column, the uppersurfaces of the word lines WL0, WL2, WL4, WL6, and WL8 are exposed. In acolumn (this will be referred to as a third column) adjacent to thesecond column across the first column, the upper surfaces of the wordlines WL9, WL11, WL13, WL15, and WL17 are exposed. In a column (thiswill be referred to as a fourth column) adjacent to the first columnacross the second column, the upper surfaces of the word lines WL10,WL12, WL14, WL16, and WL18 are exposed.

Additionally, in each column, the interconnect layer located on theupper layer is exposed in a region closer to the connecting portionCNCT. That is, in the row closest to the connecting portion CNCT, theupper surfaces of the word lines WL7, WL8, WL17, and WL18 are exposed.In the row farthest from the connecting portion CNCT, the upper surfacesof the selection gate line SGS and the word lines WL0, WL9, and WL10 areexposed.

A contact plug CP11 is formed on each of the (5×4) regions. The contactplugs CP11 are connected to metal interconnect layers IC2 formed usingthe interconnects D1 above the cells. The metal interconnect layers IC2are extracted from the hook-up portion WLHU to the lane R. The metalinterconnect layers IC2 are then connected to the transistors 50 of therow decoder RD in the lane R (this will be described later).

<Planar Structure of Lane R>

Details of the planar structure of the lane R will be described nextwith reference to FIGS. 12 and 13. FIGS. 12 and 13 show the planarlayout (X-Y plane) of three cell portions CEL and two lanes R locatedbetween them. The dot dashed line at the end in the Y-axis direction inFIG. 12 and the dot dashed line at the end in the Y-axis direction inFIG. 13 represent the same position.

As described with reference to FIG. 9, in the lane R, the hook-upportions WLHU in the cell regions adjacent in the Y direction face eachother. In the lane R, the metal interconnect layers IC2 formed in onehook-up portion WLHU are connected to the metal interconnect layers IC2formed in the other hook-up portion WLHU. In addition, contact plugsCP21 are provided in the insulating layer provided in the lane R. Thecontact plugs CP21 are used to connect the word lines WL to thetransistors 50 of the row decoder RD and, more specifically, used toconnect the metal interconnect layers IC2 connected to the word lines WLto the interconnects M1 under the cells. The contact plugs CP21 areconnected to the corresponding metal interconnect layers IC2 and furtherconnected to the interconnects M1 under the cells. The selection gateline SGS and the word lines WL are electrically connected to thetransistors 50 of the row decoder RD via the interconnect layers IC2 andthe contact plugs CP21.

That is, of the selection gate lines SGS and SGD and the word lines WLstacked in the cell portion CEL, the selection gate line SGD iselectrically connected the region under the memory cell array via thecontact plug CP12 formed in the trench DY provided in the cell portionCEL. On the other hand, the selection gate line SGS and the word linesWL are electrically connected the region under the memory cell array viathe contact plugs CP21 formed in the lane R.

Note that in the lane C, the bit line BL is electrically connected tothe region under the memory cell array. The planar structure of the laneC is almost the same as that of the lane R, and a detailed descriptionthereof will be omitted.

1.2.2.2 Sectional Structure of Sub-Array SBARY

Details of the sectional structure of the sub-array SBARY describedconcerning the planar structure will be described next.

<Sectional Structure of Cell Region>

The sectional structure of the cell region will be described first. FIG.14 is a sectional view taken along a line 14-14 in FIG. 6. FIG. 15 is asectional view taken along a line 15-15 in FIG. 11.

As described above, the row decoder 120 and the sense amplifier 140 areformed on the semiconductor substrate 500, and the cell regions areformed in a region above them. In the cell portion, first, the sourceline SL is provided on an interlayer dielectric film (not shown), theselection gate line SGS is formed above the source line SL, theplurality of word lines WL are stacked above the selection gate lineSGS, and the selection gate line SGD is provided above them. Theinterconnect layers are electrically isolated by insulating layers.

In addition, the silicon pillars MH are provided so as to extend up tothe source line SL through the selection gate line SGD and the wordlines WL. Contact plugs CP13 are provided on the silicon pillars MH, andthe interconnect layers IC0 functioning as the bit lines BL are providedon the contact plugs CP13.

The hook-up portion WLHU will be described with reference to FIG. 15. Inthe hook-up portion WLHU as well, the source line SL is provided on theinterlayer dielectric film that covers the row decoder 120 and the senseamplifier 140, the selection gate line SGS is formed above the sourceline SL, and the plurality of word lines WL are stacked above theselection gate line SGS, as in the cell portion CEL. In the hook-upportion WLHU, the end of each of the selection gate line SGS and theword lines WL facing the lane R has a step shape. That is, theinterconnects in the lower layer is long along the Y direction and has aregion that does not overlap the interconnects in the upper layer.

FIGS. 16, 17, 18, 19, and 20 show this state. FIGS. 16, 17, 18, 19, and20 are sectional views taken along a line 16-16, a line 17-17, a line18-18, a line 19-19, and a line 20-20 in FIG. 11. As shown in FIGS. 16,17, 18, 19, and 20, the regions where the interconnects in the lowerlayer and the interconnects in the upper layer do not overlap correspondto the (5×4) regions described with reference to FIG. 10 where thecontact plugs CP11 are formed. Note that although not illustrated inFIGS. 16, 17, 18, 19, and 20, an insulating layer is buried around thecontact plugs CP11, and the contact plugs CP11 are electricallyinsulated from each other.

The trench DY will be described next. As shown in FIG. 13, the trench DYphysically separates the source line SL, the selection gate line SGS,and the word lines WL between the cell portion CEL and the hook-upportion WLHU. As described above, an insulating layer is buried in thetrench DY. The contact plugs CP12 are formed in the insulating layer.The contact plugs CP12 extend from the level of the interconnects D1(metal interconnect layers IC1) above the cells to the level of theinterconnects M1 under the cells. The contact plugs CP12 are furtherconnected to the transistors 50 of the row decoder RD via theinterconnects M0 under the cells. The transistors 50 are locatedimmediately under the corresponding cell regions.

<Sectional Structure of Lane C>

The sectional structure of the lane C will be described next withreference to FIG. 14. As described above, in the lane C, the stackedstructure from the source line SL to the selection gate line SGD isremoved, and an insulating layer is buried, as in the lane R. In thelane C, contact plugs CP20 are provided in the insulating layer.

As shown in FIG. 14, the contact plugs CP20 extend from the level of theinterconnects D1 (metal interconnect layers IC0: bit lines BL) above thecells to the level of the interconnects M1 under the cells. The contactplugs CP20 are further connected to the transistors 14 of the senseamplifiers SA via the interconnects M0 under the cells. The senseamplifiers 14 are located immediately under the corresponding cellregions.

<Sectional Structure of Lane R>

The sectional structure of the lane R will be described next withreference to FIG. 21. FIG. 21 is a sectional view taken along a line21-21 in FIGS. 12 and 13. As described above, in the lane R, the stackedstructure from the source line SL to the selection gate line SGD isremoved, and an insulating layer is buried. In the lane R, the contactplugs CP21 are provided in the insulating layer.

Additionally, as shown in FIG. 21, the selection gate lines SGS and theword lines WL facing across the lane R are commonly connected to themetal interconnect layers IC2 via the contact plugs CP11. In the lane R,the metal interconnect layers IC2 are connected to the contact plugsCP21.

The contact plugs CP20 extend from the level of the interconnects D1(metal interconnect layers IC2) above the cells to the level of theinterconnects M1 under the cells. The contact plugs CP20 are furtherconnected to the transistors 50 of the row decoder RD via theinterconnects M0 under the cells. The transistors 50 are also locatedimmediately under the corresponding cell regions, like the transistors50 connected to the selection gate lines SGD.

Note that the contact plugs CP21 formed in the trench DY in the cellregion located above the sense amplifier SA are also electricallyconnected to the row decoders RD located immediately under the adjacentcell region by the interconnects M1 or M0 under the cells via the regionunder the lane R.

1.2.2.3 Connection Relationship in Lane R and Lane C

As described 1.2.2.1 and 1.2.2.2, the selection gate line SGS and theword lines WL are extracted in the lane R up to the region under thememory cell array and connected to the row decoder RD. Further, the bitlines BL are extracted in the lane C up to the region under the memorycell array and connected to the sense amplifier SA. Furthermore, theselection gate lines SGD are extracted in the trench DY in the cellregion up to the region under the memory cell array and connected to therow decoder RD.

The cell regions include cell regions with the row decoders RD existingimmediately under them and cell regions with the sense amplifiers SAexisting immediately under them. Hence, when the row decoder RD existsimmediately under the cell region, the selection gate lines SGS and SGDthe word lines WL are connected to the row decoder RD. However, when notthe row decoder RD but the sense amplifier SA exists, the selection gatelines SGS and SGD the word lines WL are connected to the row decoder RDimmediately under the adjacent cell region.

In addition, the plurality of lanes C are provided in the memory cellarray. Each bit line BL is connected to the sense amplifier SA in one ofthe plurality of lanes C, and the connecting portions between the bitlines BL and the sense amplifier SA are distributed.

The above-described point will be described with reference to FIG. 22.FIG. 22 shows the planar layout of the sub-array SBARY. As shown in FIG.22, the sub-array SBARY includes the cell regions 60-1 to 60-4. Thesense amplifier SA is provided immediately under each of the cellregions 60-1 and 60-4. The set of the row decoders RD and the arithmeticcircuit YLOG is provided immediately under each of the cell regions 60-2and 60-3.

Blocks BLKa in the cell region 60-1 and the blocks BLKa in the cellregion 60-3 face each other across a lane RA. The word lines WL and theselection gate lines SGS in these blocks are connected to each other bymetal interconnect layers IC2A and connected, via the lane RA, to a rowdecoder RDa (transistors 50) immediately under the cell region 60-3. Inaddition, the selection gate lines SGD in the blocks BLKa in the cellregion 60-1 and the selection gate lines SGD in the blocks BLKa in thecell region 60-3 are also connected, via the trench DY, to the rowdecoder RDa immediately under the cell region 60-3. That is, the twoblocks BLKa share the transistors 50.

The word lines WL and the selection gate lines SGS in blocks BLKb thatform the cell units CU together with the blocks BLKa in the cell region60-3 are connected to the blocks BLKb in another sub-array SBARYadjacent in the Y-axis direction across a lane RC by metal interconnectlayers IC2C, and connected, via the lane RC, to a row decoder RDb(transistors 50) immediately under the cell region 60-3. In addition,the selection gate lines SGD in the blocks BLKb are also connected, viathe trench DY, to the row decoder RDb immediately under the cell region60-3. That is, the two blocks BLKb share the transistors 50.

In addition, the word lines and the selection gate lines SGS in theblocks BLKb in the cell region 60-1 are connected to the blocks BLKb inanother sub-array SBARY adjacent in the Y-axis direction across a laneRB by metal interconnect layers IC2B, and connected, via the lane RB, tothe row decoder RDb immediately under the adjacent sub-array SBARY. Inaddition, the selection gate lines SGD in the blocks BLKb are alsoconnected, via the trench DY, to the row decoder RDb immediately underthe adjacent sub-array SBARY.

This also applies to the cell regions 60-2 and 60-4. That is, the blocksBLKa in the cell region 60-2 and the blocks BLKa in the cell region 60-4face each other across the lane RA. The word lines WL and the selectiongate lines SGS in these blocks are connected to each other by the metalinterconnect layers IC2A and connected, via the lane RA, to the rowdecoder RDa immediately under the cell region 60-2. In addition, theselection gate lines SGD in the blocks BLKa in the cell region 60-2 andthe selection gate lines SGD in the blocks BLKa in the cell region 60-4are also connected, via the trench DY, to the row decoder RDaimmediately under the cell region 60-2.

The word lines WL and the selection gate lines SGS in blocks BLKb in thecell region 60-2 are connected to the blocks BLKb in another sub-arraySBARY adjacent in the Y-axis direction across the lane RB by the metalinterconnect layers IC2B, and connected, via the lane RB, to the rowdecoder RDb immediately under the cell region 60-2. In addition, theselection gate lines SGD in the blocks BLKb are also connected, via thetrench DY, to the row decoder RDb immediately under the cell region60-2.

In addition, the word lines and the selection gate lines SGS in theblocks BLKb in the cell region 60-4 are connected to the blocks BLKb inanother sub-array SBARY adjacent in the Y-axis direction across the laneRC by the metal interconnect layers IC2C, and connected, via the laneRC, to the row decoder RDb immediately under the adjacent sub-arraySBARY. In addition, the selection gate lines SGD in the blocks BLKb arealso connected, via the trench DY, to the row decoder RDb immediatelyunder the adjacent sub-array SBARY.

In the lane C, the bit lines BL are connected to the sense amplifier SA.In the example shown in FIG. 22, of the bit lines BL0 to BL3 passingthrough the cell regions 60-1 and 60-2, the bit lines BL0 and BL1 areconnected to the sense amplifier SA immediately under the cell region60-1 via a lane CA. On the other hand, the bit lines BL2 and BL3 areconnected to the sense amplifier SA immediately under the cell region60-1 via a lane CB.

1.3 Effect According to this Embodiment

According to the arrangement of this embodiment, the block size of thememory cell array can be reduced. This effect will be described below.

In the NAND flash memory, since the block size may be a unit to, forexample, erase data, reducing the block size may be required in somecases.

At this time, to exploit the advantage of a 3D-stacked memory in whichthe word lines WL is stacked, the number of string units may bedecreased without decreasing the number of stacked word lines WL. Inthis case, however, although the block size may be reduced, the numberof stacked word lines WL does not change. Hence, the size of the hook-upregion of the word lines is almost the same as that before the reductionof the block size. Then, when the number of string units is simplydecreased, a wasteful region may be generated, and the degree ofintegration may lower.

In this regard, according to the arrangement of this embodiment, asdescribed with reference to FIGS. 9, 10, 11, 12, and 13, the blocks BLKare arranged such that the cell portions CEL are adjacent to each otherin the X-axis direction, and the word line hook-up regions WLHU faceeach other in the Y-axis direction. Hence, according to thisarrangement, it is possible to suppress generation of a wasteful unusedregion and reduce the block size while efficiently arranging the blocksBLK.

The planar structure of the block BLK according to this embodiment maybe formed by, for example, the following etching steps performed afterthe interconnect layers functioning as the source line SL, the selectiongate line SGS, the word lines WL, and the selection gate lines SGD areformed on the interlayer dielectric film 501. That is, the steps are

(1) etching the interconnect layers, which is performed to form the laneC and the lane R,

(2) etching the interconnect layers, which is performed to form the slitSLT1 that separates cell units in a cell region,

(3) etching the interconnect layers, which is performed to form the slitSLT2 that separates cell portions in each cell unit CU, and

(4) etching the interconnect layers, which is performed to form thetrench DY in which a contact of the selection gate line SGD is providedin each cell unit CU.

Note that the order of the above-described etching steps may be changedas much as possible, and the plurality of etching steps may be performedsimultaneously. In addition, in (2) and (3), the source line SL may benot etched.

As a result, the cell units CU adjacent in the Y-axis direction faceeach other in the hook-up region WLHU in any place. The word lines WL inthe two hook-up regions WLHU facing each other are commonly connected inthe lane R and connected to the row decoder RD. The trench DY is formedso as to cross the slits SLT1 and SLT2 and also cross the lane C.

Note that in this specification, the “word line WL” in the views ofplanar layouts and sectional structures means a conductive layer formedin the interlayer dielectric film 502 and located between a conductivelayer functioning as a source line and the interconnect D1 in, forexample, FIG. 8 or the like. This conductive layer is a conductive layerthat contacts the memory hole MH via a gate insulating film, a chargeaccumulation layer, and a block insulating film. This also applies tothe selection gate lines SGD and SGS. In other words, the word line WLmeans a plurality of conductive layers, for example, polysilicon layersstacked between a conductive layer functioning as the selection gateline SGS and a conductive layer functioning as the selection gate lineSGD along the Z-axis direction.

2. Second Embodiment

A semiconductor memory device according to the second embodiment will bedescribed next. This embodiment is directed to the arrangement of a rowdecoder RD provided at an end of a memory cell array 110 according tothe first embodiment. Only points different from the first embodimentwill be described below.

2.1 Planar Layout of Region under Memory Cell Array

FIG. 23 shows the planar layout of a region under the memory cell arrayaccording to this embodiment, in other words, the planar layout of senseamplifiers SA, the row decoders RD, and arithmetic circuits YLOG.

As shown in FIG. 23, row decoders RD′ and dummy regions DMY are providedin a region adjacent to the region overlapping the memory cell array 110in the Y-axis direction. The row decoders RD′ are provided in regionsadjacent to the sense amplifiers SA, and the dummy regions DMY areprovided in regions adjacent to the row decoders RD.

FIG. 24 shows a region R2 in FIG. 23 in detail. As shown in FIG. 24,each row decoder RD′ includes transistors 50, and has the samearrangement as the row decoder RD provided in the region overlapping thememory cell array 110. The row decoder RD′ is connected, via a lane R,to word lines WL and selection gate lines SGS in blocks BLKb providedabove the sense amplifier SA adjacent to the row decoder RD′ in theY-axis direction.

On the other hand, dummy element regions AA and gate electrodes(semiconductor layers) GC are formed in each dummy region DMY. Theseelements are provided to prevent an etching pattern from largelycollapsing at the etching for forming, for example, the row decoders RDand RD′ or the sense amplifiers SA, and do not particularly function aseffective semiconductor elements.

2.2 Effect According to this Embodiment

In a case in which the block layout described in the first embodiment isused, to connect the word lines WL in the blocks BLKb in the cell regionlocated on the sense amplifier SA to the row decoder RD immediatelyunder the cell region, for example, the interconnects under the cellsacross the sense amplifier SA. In this regard, according to thisembodiment, the row decoders RD′ for the blocks BLKb are providedoutside the memory cell array, thereby suppressing congestion of theinterconnects under the cells.

In addition, basically, the sense amplifiers SA and the row decoders RDoverlap the memory cell array 110 in the Z-axis direction. When viewedon the X-Y plane, the sense amplifiers SA and the row decoders RD arecovered with the memory cell array 110 and are invisible. However,according to this embodiment, it is possible to see a state in which therow decoders RD′ each having almost the same width as a cell region 60along the X-axis direction are formed at the same repetitive periodalong the X-axis direction.

Furthermore, the dummy region DMY is preferably provided between the rowdecoders RD′ that are adjacent to each other. The dummy element regionsAA and the gate electrodes GC in the dummy region DMY may be set in anelectrically floating state. Alternatively, they may be fixed to apredetermined potential (for example, 0 V) or may be electricallyindependent of the row decoders RD and RD′ and the sense amplifiers SAon the periphery.

3. Third Embodiment

A semiconductor memory device according to the third embodiment will bedescribed next. In this embodiment, a loop-shaped stacked structure thatsurrounds the periphery of each cell region is formed in the first andsecond embodiments. Only points different from the first and secondembodiments will be described below.

3.1 Planar Layout

FIG. 25 shows the planar layout of a cell region and a stacked structureprovided on the periphery of it.

As shown in FIG. 25, a loop-shaped stacked structure 700 is provided onthe periphery of the cell region so as to surround the cell region.Like, for example, a cell portion CEL, the stacked structure 700 has astructure in which conductive layers formed in the same layers asinterconnect layers functioning as a source line SL, as selection gateline SGS, word lines WL, and selection gate lines SGD are stacked. Theinterval between the stacked structure 700 and an adjacent cell unit CUis, for example, almost the same as the width of a slit SLT1, a lane C,or a lane R. This region is filled with, for example, an insulatingfilm, and the cell region and the stacked structure 700 are electricallyisolated.

The stacked structure 700 includes a recess in each side wall on a sidefacing the cell region. This recess is formed in a region facing atrench DY in the X-axis direction, as shown as a region R3 in FIG. 25.The recess is formed from the uppermost layer to the lowermost layer ofthe stacked structure 700, and the inside is filled with, for example,an insulating film.

FIG. 26 shows sectional views of FIG. 25. The upper view is taken alonga line 26A-26A, and the lower view is taken along a line 26B-26B. Theupper and lower views of FIG. 26 indicate the same position in the Xdirection.

As shown in FIG. 26, in each cell portion CEL, the selection gate lineSGS, the word lines WL0 to WL18, and the selection gate lines SGD areprovided above the source line SL with an insulating layers 710interposed therebetween. The stacked structure 700 also has the samestacked structure as the cell portion. That is, interconnect layersIC11, IC12-0 to IC12-18, and IC13 are formed above an interconnect layerIC10 with an insulating layers 720 interposed therebetween. Theinterconnect layer IC10 is formed at the same time as the source line SLat the same level (height) using, for example, the same material. Theinterconnect layer IC11 is formed at the same time as the selection gateline SGS at the same level (height) using, for example, the samematerial. The interconnect layers IC12-0 to 12-18 are formed at the sametime as the word lines WL0 to WL18 at the same levels (heights) using,for example, the same material. The interconnect layer IC13 is formed atthe same time as the selection gate lines SGD at the same level (height)using, for example, the same material. Note that the interconnect layerIC13 may be not formed. An insulating layer 730 is buried between thestacked structure 700 and the cell portion CEL (and a hook-up portionWLHU and a connecting portion CNCT).

The stacked structure 700 does not actually function as a certainsemiconductor element. Hence, the interconnect layers IC11, IC12-0 toIC12-18, and IC13 included in the stacked structure 700 may beelectrically isolated from the source line SL, the selection gate lineSGS, the word lines WL0 to WL18, and the selection gate lines SGD andfixed to a predetermined potential (for example, 0 V), or may be set inan electrically floating state.

In this embodiment, as shown in the lower view of FIG. 26, the recess R3is formed in a portion facing the trench DY, and the insulating layer730 is buried in the recess. In other words, in the region facing thetrench DY, the width of the stacked structure 700 along the X-axisdirection is made smaller than in the remaining regions (for example, aregion facing the cell portion CEL).

3.2 Effect According to this Embodiment

As described in the first embodiment, the interconnect layersfunctioning as the source line SL, the selection gate line SGS, the wordlines WL, and the selection gate lines SGD are etched when forming thelanes C and the lanes R. At this time, inside the memory cell array 110,since the regions to be etched are located at equal intervals and havethe same etching width, processing may be executed at a high accuracy.However, etching performed at the ends of the memory cell array 110 isperformed not for the purpose of forming the lanes C and the lanes R butfor the purpose of removing all interconnect layers in unnecessaryregions other than the memory cell array 110. Hence, at the ends of thememory cell array 110, the periodicity of the etching pattern may bedisturbed, and the processing accuracy may lower.

In this embodiment, the stacked structure 700 like the cell region isprovided on the periphery of the memory cell array 110, thereby enablingetching based on the same pattern as the lanes C and the lanes R insidethe memory cell array 110. This makes it possible to process theinterconnect layers at a high accuracy even at the ends of the memorycell array 110.

In addition, an etching for forming the trenches DY may be performedafter the etching for forming the lanes C and the lanes R. Hence, whenthe stacked structure 700 is provided, part of the stacked structure 700is also etched when forming the trenches DY. As a result, as shown inFIG. 25, the recess R3 is formed in the region facing the trench DY onthe inner surface of the loop-shaped stacked structure.

4. Modifications and the Like

As described above, the semiconductor memory device according to theabove embodiment includes a row decoder provided on a semiconductorsubstrate, and a memory cell array provided above the row decoder andincluding a first block. The first block includes a first region (CEL inFIG. 10) spreading along a first plane formed by a first direction (Ydirection in FIG. 10) that is an in-plane direction of the semiconductorsubstrate and a second direction (X direction in FIG. 10) that is thein-plane direction and is different from the first direction and havinga first width along the second direction (X direction in FIG. 10), asecond region (WLHU in FIG. 10) spreading along the first plane, havinga second width larger than the first width along the second direction (Xdirection in FIG. 10), and being adjacent to the first region (CEL inFIG. 10) in the first direction (Y direction in FIG. 10); and a thirdregion (CNCT in FIG. 10) spreading along the first plane, having a thirdwidth smaller than the first width along the second direction (Xdirection in FIG. 10), and located between the first region (CEL in FIG.10) and the second region (WLHU in FIG. 10) to connect the first regionand the second region. The first region, the second region, and thethird region include a plurality of first word lines (WL in FIG. 15)stacked along a third direction (Z direction in FIG. 10) that is avertical direction of the semiconductor substrate. The first regionfurther includes a first selection gate line (SGD in FIG. 15) providedabove a first word line of an uppermost layer. The memory cell arrayfurther includes a first insulating layer (730 in FIG. 26) buried in afirst trench (DY in FIG. 10) between the first region (CEL in FIG. 10)and the second region (WLHU in FIG. 10) and being in contact with thethird region (CNCT in FIG. 10) in the second direction (X direction inFIG. 10), a first contact plug (CP12 in FIG. 10 or 26) provided in thefirst insulating layer (730 in FIG. 26) and electrically connected tothe row decoder, and a first interconnect layer (IC1 in FIG. 11 or 15)configured to connect the first selection gate line (SGD in FIG. 11 or15) and the first contact plug (CP12 in FIG. 11 or 15).

In addition, the semiconductor memory device according to the aboveembodiment includes a row decoder (120) provided on a semiconductorsubstrate including a first surface, and a memory cell array providedabove the row decoder and including a set of cell regions (60) arrangedin a matrix, the memory cell array including an interconnect (WL)connected to the row decoder and overlapping the row decoder (120, RD)on a plane along the first surface. The row decoder (120) includes afirst transistor (DR′, 50 in FIGS. 23-24) provided outside an outerperiphery of the set of the cell regions on the plane along the firstsurface.

In addition, the semiconductor memory device according to the aboveembodiment includes a memory cell array (110 in FIG. 25) including asource line (SL) provided above a first surface of a semiconductorsubstrate, and a word line (WL) provided above the source line, a wall(700 in FIG. 25) surrounding the memory cell array (110) in a planealong the first surface, including a plurality of conductive layersarranged in a direction crossing the first surface of the semiconductorsubstrate from a layer of the source line to a layer of the word line,and including a recess (R3 in FIG. 25) at an inner surface extendingfrom an upper surface to a lower surface, and an insulating layerprovided from a position of the upper surface of the wall to a positionof the lower surface and being in contact with the inner surface of thewall in the recess.

Note that the embodiments are not limited to the above-described forms,and various modifications can be made. For example, in the aboveembodiments, a case in which the number of stacked word lines WL is 19has been described as an example. However, the number is not limited tothis, and is 2^(n) (n is a natural number) in general. Additionally, inthe above embodiments, a case in which the memory holes MH are arrangedin a staggered pattern, as shown in FIG. 10 or the like, has beendescribed as an example. However, the silicon pillars MH may be arrangedin a line in the Y-axis direction.

In FIGS. 12 and 13 described in the first embodiment, a case in whichthe contact plugs CP21 in the lane R are arranged on a straight linealong the X-axis direction has been described as an example. However, asshown in FIG. 27, the contact plugs CP21 may be provided so as to bearranged on the X-Y plane in an oblique direction with respect to theX-axis direction and the Y-axis direction. In this case, as shown inFIG. 28, the directions in which the contact plugs CP21 corresponding tothe plurality of blocks BLK adjacent to each other in the X directionare arranged may be opposite to each other. In other words, the contactplugs CP21 may be arranged such that the line that connects them may bebent at the boundaries of the blocks BLK.

In addition, the arrangement shown in FIG. 25 described in the thirdembodiment may be an arrangement shown in, for example, FIGS. 29, 30,and 31. That is, the stacked structure 700 faces the trenches DY at twosurfaces facing in the X direction. At this time, the stacked structure700 may face, at one surface, the trench DY between the hook-up portionWLHU of one block BLKa (the block located on the upper side in theY-axis direction) and the cell portion CEL of the other block BLKb (theblock located on the lower side in the Y-axis direction), and may face,at the other surface as well, the trench DY between the hook-up portionWLHU of the block BLKa and the cell portion CEL of the block BLKb.

Alternatively, as shown in FIG. 30, the stacked structure 700 may face,at one surface, the trench DY between the cell portion CEL of the blockBLKa and the hook-up portion WLHU of the block BLKb, and may face, atthe other surface as well, the trench DY between the cell portion CEL ofthe block BLKa and the hook-up portion WLHU of the block BLKb.

Otherwise, as shown in FIG. 31, the stacked structure 700 may face, atone surface, the trench DY between the cell portion CEL of the blockBLKa and the hook-up portion WLHU of the block BLKb, and may face, atthe other surface, the trench DY between the hook-up portion WLHU of theblock BLKa and the cell portion CEL of the block BLKb.

In addition, the embodiments may be executed independently or may beexecuted in combination. That is, the second and third embodiments maybe executed independently. When the third embodiment is executed incombination with the second embodiment, the stacked structure 700 mayoverlap the row decoder RD′ at least partially. Alternatively, they maycompletely overlap. In this case, on the X-Y plane shown in FIG. 24, therow decoders RD′ and the dummy regions DMY are covered with the stackedstructure 700 and are invisible.

In addition, various arrangements can be applied to the memory cellarray 110. An arrangement of the memory cell array 110 is described in,for example, U.S. patent application Ser. No. 12/407,403 filed on Mar.19, 2009 and entitled “THREE DIMENSIONAL STACKED NONVOLATILESEMICONDUCTOR MEMORY”. Arrangements are also described in U.S. patentapplication Ser. No. 12/406,524 filed on Mar. 18, 2009 and entitled“THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY”, U.S.patent application Ser. No. 12/679,991 filed on Mar. 25, 2010 andentitled “NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OFMANUFACTURING THE SAME”, and U.S. patent application Ser. No. 12/532,030filed on Mar. 23, 2009 and entitled “SEMICONDUCTOR MEMORY AND METHOD FORMANUFACTURING SAME”. These patent applications are entirely incorporatedherein by reference.

Furthermore, the terms “connect” and “couple” used in the embodimentsinclude both a case in which direct connection is done and a case inwhich some constituent element intervenes.

When the memory cell holds 2-bit data, the threshold voltage of thememory cell may have possible four levels. The four level includes “Er”level, “A” level, “B” level, and “C” level in ascending order of thethreshold level, the voltage applied to the selected word line in theread operation of A level may range from, for example, 0 V to 0.55 V.However, the present embodiments are not limited to this, and thevoltage may be set within any one of the ranges of 0.1 V to 0.24 V, 0.21V to 0.31 V, 0.31 V to 0.4 V, 0.4 V to 0.5 V, and 0.5 V to 0.55 V. Thevoltage applied to the selected word line in the read operation of Blevel may range from, for example, 1.5 V to 2.3 V. However, the voltageis not limited to this and may be set within any one of the ranges of1.65 V to 1.8 V, 1.8 V to 1.95 V, 1.95 V to 2.1 V, and 2.1 V to 2.3 V.The voltage applied to the selected word line in the read operation of Clevel may range from, for example, 3.0 V to 4.0 V. However, the voltageis not limited to this and may be set within any one of the ranges of3.0 V to 3.2 V, 3.2 V to 3.4 V, 3.4 V to 3.5 V, 3.5 V to 3.6 V, and 3.6V to 4.0 V. A time (tR) of the read operation may be set within therange of, for example, 25 μs to 38 μs, 38 μs to 70 μs, or 70 μs to 80μs.

A write operation includes a program operation and a verify operation.In the write operation, the voltage first applied to the selected wordline in the program operation may range from, for example, 13.7 V to14.3 V. The voltage is not limited to this and may be set within any oneof the ranges of, for example, 13.7 V to 14.0 V and 14.0 V to 14.6 V.The voltage first applied to the selected word line when write-accessingan odd-numbered word line and the voltage first applied to the selectedword line when write-accessing an even-numbered word line may bedifferent. If the program operation is ISPP (Incremental Step PulseProgram), the step-up voltage is, for example, 0.5 V. The voltageapplied to an unselected word line may be set within the range of, forexample, 6.0 V to 7.3 V. However, the voltage is not limited to this andmay be set within the range of, for example, 7.3 V to 8.4 or set to 6.0V or less. The pass voltage to be applied may be changed depending onwhether the unselected word line is an odd-numbered word line or aneven-numbered word line. A time (tProg) of the write operation may beset within the range of, for example, 1,700 μs to 1,800 μs, 1,800 μs to1,900 μs, or 1,900 μs to 2000 μs.

In erase operation, the voltage first applied to the well which isformed in the upper portion of the semiconductor substrate and abovewhich the memory cell is arranged is set within the range of, forexample, 12 V to 13.6 V. However, the voltage is not limited to this andmay be set within the range of, for example, 13.6 V to 14.8 V, 14.8 V to19.0 V, 19.0 V to 19.8 V, or 19.8 V to 21 V. A time (tErase) of theerase operation may be set within the range of, for example, 3,000 μs to4,000 μs, 4,000 μs to 5,000 μs, or 4,000 μs to 9,000 μs.

The structure of the memory cell may include a charge accumulation layerarranged on a 4 to 10 nm thick tunnel insulating film. The chargeaccumulation layer may have a stacked structure of a 2 to 3 nm thickinsulating film of SiN or SiOn and 3 to 8 nm thick polysilicon. A metalsuch as Ru may be doped into the polysilicon. An insulating film may beprovided on the charge accumulation layer. The insulating film mayinclude a 4 to 10 nm thick silicon oxide film sandwiched between a 3 to10 nm thick lower High-k film and a 3 to 10 nm thick upper High-k film.As the High-k film, HfO or the like is usable. The silicon oxide filmmay be thicker than the High-k film. A 30 to 70 nm thick controlelectrode may be formed on a 3 to 10 nm thick work function adjustingmaterial on the insulating film. Here, the work function adjustingmaterial may be a metal oxide film such as TaO or a metal nitride filmsuch as TaN. As the control electrode, W or the like is usable. An airgap may be formed between the memory cells.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor memory device comprising: a rowdecoder provided on a semiconductor substrate including a first surface;a memory cell array provided above the row decoder and including a setof cell regions arranged in a matrix, the memory cell array including aninterconnect connected to the row decoder and overlapping the rowdecoder on a plane along the first surface; and a first connectingportion, wherein the row decoder includes a first transistor providedoutside an outer periphery of the set of the cell regions on the planealong the first surface, and the first connecting portion is providedbetween the first transistor and one cell region of the set of the cellregions and includes a first contact plug configured to connect theinterconnect and the row decoder.
 2. The semiconductor memory deviceaccording to claim 1, wherein the row decoder further includes a secondtransistor overlapping the memory cell array on the plane along thefirst surface, and the semiconductor memory device further comprises asense amplifier provided on the semiconductor substrate and overlappingthe memory cell array on the plane along the first surface.
 3. Thesemiconductor memory device according to claim 1, wherein the set of thecell regions includes a first cell region and a second cell region whichare adjacent to each other, the first transistor is located outside anouter periphery of the first cell region on the plane along the firstsurface, and the semiconductor memory device further comprises a dummyregion provided outside an outer periphery of the second cell region onthe plane along the first surface and including an active region and aconductor.
 4. The semiconductor memory device according to claim 3,wherein the first connecting portion is provided between the first cellregion and the first transistor, the interconnect of the first cellregion is electrically connected to the first transistor via the firstconnecting portion, and the semiconductor memory device furthercomprises a second connecting portion provided between the second cellregion and the dummy region and including a second contact plugconfigured to connect the interconnect of the second cell region to therow decoder located immediately under the second cell region.
 5. Asemiconductor memory device comprising: a semiconductor substrate havinga surface extending in a first direction and a second direction crossingthe first direction; a first row decoder provided on the semiconductorsubstrate; a memory cell array provided above the first row decoder in athird direction crossing the first direction and the second direction,the memory cell array including a plurality of blocks arranged along thesecond direction, the plurality of blocks including a first blockincluding a first region extending in the first direction and the seconddirection and having a first width in the second direction, a secondregion being provided at a one side in the first direction, extending inthe first direction and the second direction, and having a second widthin the second direction, and a third region being provided between thefirst region and the second region in the first direction, extending inthe first direction and the second direction, and having a third widthin the second direction, the third width being smaller than both thefirst width and the second width such that one sides of the first tothird regions in the second direction are non-continuous along the firstdirection and the other sides of the first to third regions in thesecond direction are continuous along the first direction, and a secondblock including a fourth region extending in the first direction and thesecond direction and having a fourth width in the second direction, afifth region being provided at the one side in the first direction,extending in the first direction and the second direction, and having afifth width in the second direction, and a sixth region being providedbetween the fourth region and the fifth region in the first direction,extending in the first direction and the second direction, and having asixth width in the second direction, the sixth width being smaller thanboth the fourth width and the fifth width such that one sides of thefourth to sixth regions in the second direction are continuous along thefirst direction and the other sides of the fourth to sixth regions inthe second direction are non-continuous along the first direction; afirst interconnect being connected between the first block and the firstrow decoder and overlapping the first row decoder when viewed in thethird direction; and a second interconnect being connected between thesecond block and the first row decoder and overlapping the first rowdecoder when viewed in the third direction, wherein the first rowdecoder includes a first transistor overlapping the second region or thefifth region when viewed in the third direction.
 6. The semiconductormemory device according to claim 5, wherein each of the first region andthe second region includes a plurality of three-dimensionally-arrangedmemory cells; the first row decoder further includes a second transistoroverlapping the first region or the fourth region when viewed in thethird direction, and the semiconductor memory device further comprises asense amplifier being provided on the semiconductor substrate andoverlapping the memory cell array when viewed in the third direction. 7.The semiconductor memory device according to claim 6, furthercomprising: a first connecting portion provided between the firsttransistor and the first region or the fourth region and including afirst contact plug configured to connect the first interconnect and thefirst row decoder.
 8. The semiconductor memory device according to claim7, wherein the semiconductor memory device further comprises a dummyregion provided outside an outer periphery of the first block andoutside an outer periphery of the second block when viewed in the thirddirection and including an active region and a conductor.
 9. Thesemiconductor memory device according to claim 8, wherein the firstconnecting portion is provided between the first region and the firsttransistor, the first interconnect of the first region is electricallyconnected to the first transistor via the first connecting portion, andthe semiconductor memory device further comprises a second connectingportion provided between the second region and the dummy region andincluding a second contact plug configured to connect the firstinterconnect of the second region to the first row decoder.
 10. Thesemiconductor memory device according to claim 5, wherein the memorycell array includes at least one source line provided above thesemiconductor substrate, and a word line provided for each of theplurality of the blocks above the source line, the semiconductor memorydevice further comprises: a wall surrounding the memory cell array whenviewed in the third direction, including a plurality of conductivelayers arranged in the third direction from a layer of the at least onesource line to a layer of the word line, and including a recess at aninner surface extending from an upper surface to a lower surface alongthe third direction; and an insulating layer provided from a position ofthe upper surface of the wall to a position of the lower surface in thethird direction and being in contact with the inner surface of the wallin the recess.
 11. The semiconductor memory device according to claim10, wherein the recess is provided in a region of the inner surface ofthe wall, facing the one side of the third region in the seconddirection.
 12. The semiconductor memory device according to claim 11,wherein the word line is provided in plurality so as to be stacked inthe third direction, and the plurality of conductive layers of the wallare located at the same layers as a plurality of word lines,respectively.
 13. The semiconductor memory device according to claim 11,wherein each of the first region and the second region includes aplurality of three-dimensionally-arranged memory cells, each of thefirst block and the second block includes a plurality of word linesstacked in the third direction and connected to respective memory cells,in the second region of the first block and in the fifth region of thesecond block, an outer periphery of one word line is retracted ascompared with an outer periphery of another word line above the one wordline such that at least part of each word line is exposed from theremaining word lines when viewed in the third direction and such thatexposed portions of the word lines form a staircase, the other side ofthe second region and the one side of the fifth region face each otherin the second direction, and the staircase of the second region and thestaircase of the fifth region are line symmetry.
 14. The semiconductormemory device according to claim 5, wherein the plurality of the blocksof the memory cell array further includes a third block including aseventh region extending in the first direction and the second directionand having a seventh width in the second direction, an eighth regionbeing provided at the other side in the first direction, extending inthe first direction and the second direction, and having an eighth widthin the second direction, and a ninth region being provided between theseventh region and the eighth region in the first direction, extendingin the first direction and the second direction, and having a ninthwidth in the second direction, the ninth width being smaller than boththe seventh width and the eighth width such that one sides of theseventh to ninth regions in the second direction are continuous alongthe first direction and the other sides of the seventh to ninth regionsin the second direction are non-continuous along the first direction,the other side of the seventh region of the third block and the one sideof the first region of the first block facing each other in the seconddirection, a fourth block including a tenth region extending in thefirst direction and the second direction and having a tenth width in thesecond direction, an eleventh region being provided at the other side inthe first direction, extending in the first direction and the seconddirection, and having an eleventh width in the second direction, and atwelfth region being provided between the tenth region and the eleventhregion in the first direction, extending in the first direction and thesecond direction, and having a twelfth width in the second direction,the twelfth width being smaller than both the tenth width and theeleventh width such that one sides of the tenth to twelfth regions inthe second direction are non-continuous along the first direction andthe other sides of the tenth to twelfth regions in the second directionare continuous along the first direction, and the one side of the tenthregion of the fourth block and the other side of the fourth region ofthe fourth block facing each other in the second direction, the one sideof the eleventh region of the fourth block and the other side of thesecond region of the first block facing each other in the seconddirection.
 15. The semiconductor memory device according to claim 14,wherein the second width is larger than the first width, the fifth widthis larger than the fourth width, the eighth width is larger than theseventh width, and the eleventh width is larger than the tenth width.16. The semiconductor memory device according to claim 15, wherein adistance between the other side of the ninth region of the third blockand the one side of the twelfth region of the fourth block in the seconddirection is larger than each of the second width, the fifth width, theeighth width, and the eleventh width.
 17. The semiconductor memorydevice according to claim 16, wherein the distance between the otherside of the ninth region and the one side of the twelfth region islarger than a sum of the first width and the fourth width.
 18. Thesemiconductor memory device according to claim 17, further comprising: asecond row decoder on the semiconductor substrate at a position tosandwich the first region, the fourth region, the seventh region and thetenth region with the first row decoder in the first direction whenviewed in the third direction; a third interconnect being connectedbetween the third block and the second row decoder and overlapping thesecond row decoder when viewed in the third direction; and a fourthinterconnect being connected between the fourth block and the second rowdecoder and overlapping the second row decoder when viewed in the thirddirection.